Datasheet

©2011 Fairchild Semiconductor Corporation
FDP083N15A Rev. C2
www.fairchildsemi.com
3
FDP083N15A — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
23456
1
10
100
300
-55
o
C
175
o
C
*Notes:
1. V
DS
= 10V
2. 250
μs Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate-Source Voltage[V]
0.1 1 10
10
100
500
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
V
GS
= 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
0 100 200 300 400
4
6
8
10
12
14
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.0 0.5 1.0 1.5
1
10
100
500
*Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
175
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0.1 1 10 30
50
100
1000
10000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
0 1428425670
0
2
4
6
8
10
*Note: I
D
= 75A
V
DS
= 30V
V
DS
= 75V
V
DS
= 120V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]