Datasheet
November 2013
FDP18N20F / FDPF18N20FT — N-Channel UniFET
TM
FRFET
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. C1
www.fairchildsemi.com
1
FDP18N20F / FDPF18N20FT
N-Channel UniFET
TM
FRFET
®
MOSFET
200 V, 18 A, 140 mΩ
Features
•R
DS(on)
= 120 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 9 A
• Low Gate Charge (Typ. 20 nC)
• Low C
rss
(Typ. 24 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery perfor-
mance of UniFET FRFET
®
MOSFET has been enhanced by
lifetime control. Its t
rr
is less than 100nsec and the reverse dv/dt
immunity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDP18N20F FDPF18N20FT Unit
V
DSS
Drain to Source Voltage 200 V
V
GSS
Gate to Source Voltage ±30 V
I
D
D r a i n C u r r e n t
- Continuous (T
C
= 25
o
C) 18 18*
A
- Continuous (T
C
= 100
o
C) 10.8 10.8*
I
DM
D r a i n C u r r e n t - P u l s e d (Note 1) 72 72* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 324 mJ
I
AR
Avalanche Current (Note 1) 18 A
E
AR
Repetitive Avalanche Energy (Note 1) 10 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 100 41 W
- Derate Above 25
o
C 0.83 0.33 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDP18N20F FDPF18N20FT Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 1.2 3.0
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
*Drain current limited by maximum junction temperature.
TO-220
G
D
S
TO-220F
G
D
S
G
S
D