Datasheet

October 2013
FDP2552 — N-Channel PowerTrench
®
MOSFET
©2002 Fairchild Semiconductor Corporation
FDP2552 Rev. C1
www.fairchildsemi.com
1
FDP2552
Features
Formerly developmental type 82869
Applications
N-Channel PowerTrench
®
MOSFET
150 V, 37 A, 36 mΩ
•
•
•
•
•
TO-220
G
D
S
G
S
D
R
DS(on)
= 32 mΩ ( Typ.) @ V
GS
= 10 V, I
D
= 16 A
Q
G(tot)
= 39 nC ( Typ.) @ V
GS
= 10 V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
•
Micro Solar Inverter
•
Motor drives and Uninterruptible Power Supplies
•
Battery Protection Circuit
•
Synchronous Rectification
•
Cons
umer Appliances
Thermal Resistance Junction to Case, Max.
Symbol Parameter
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
37 A
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V) 26 A
Continuous (T
amb
= 25
o
C, V
GS
= 10V) with R
θJA
= 43
o
C/W 5 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 390 mJ
P
D
Power dissipation 150 W
Derate above 25
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 175
o
C
Thermal Resistance Junction to Ambient (Note 2), Max.
R
θJC
o
C/W
R
θJA
o
C/W
FDP2552
Unit
1.0
W/
o
C
1.0
62