Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP2710, MOSFET

October 2013

FDP2710 — N-Channel PowerTrench

MOSFET

FDP2710 Rev. C1

www.fairchildsemi.com

Absolute Maximum Ratings T

= 25°C unless otherwise noted

FDP2710

N-Channel PowerTrench

MOSFET

250 V, 50 A, 42.5 mΩ

TO-220

Features

•R

DS(on)

= 36.3 mΩ ( Typ.)@ V

= 10 V, I

= 25 A

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench technology for

Extremely Low

DS(on)

• High Power and Current Handing Capability

• RoHS Compliant

General Description

This

N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been tailored to minimize the on-state resistance while

maintaining superior switching performance.

Applications

• Consumer Appliances

• Synchronous Rectification

Symbol Parameter FDP2710 Unit

Drain-Source Voltage 250 V

Gate-Source voltage ± 30 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

31.3

Drain Current - Pulsed

(Note 1)

See Figure 9

Single Pulsed Avalanche Energy

(Note 2)

145 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3) 4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

260

2.1

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Thermal Characteristics

Symbol Parameter FDP2710 Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W

Summary of content (8 pages)

PAGE 1
FDP2710 N-Channel PowerTrench® MOSFET 250 V, 50 A, 42.5 mΩ Features General Description • RDS(on) = 36.3 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Device Marking Device Package Reel Size Tape Width Quantity FDP2710 FDP2710 TO-220 Tube N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics ID,Drain Current[A] 100 Figure 2. Transfer Characteristics 250 VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 100 o 150 C ID,Drain Current[A] 500 10 o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 1 0.1 2. TC = 25 C 1 VDS,Drain-Source Voltage[V] 1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS,Gate-Source Voltage[V] 10 Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 2.5 1.1 1.0 0.9 0.8 -100 * Notes : 1. VGS = 0V 2. ID = 250μA -50 0 50 100 150 o TJ, Junction Temperature [ C] * Notes : 1. VGS = 10V 2. ID = 25A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDP2710 — N-Channel PowerTrench® MOSFET Figure 12. Gate Charge Test Circuit & Waveform IG = const. Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT DUT VGS 90% 10% 10% td(on d( on)) tr t on td(o d( of f) tf t of offf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2007 Fairchild Semiconductor Corporation FDP2710 Rev. C1 5 www.fairchildsemi.
PAGE 6
FDP2710 — N-Channel PowerTrench® MOSFET Figure 15.
PAGE 7
FDP2710 — N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 3L Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.