Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP3651U, MOSFET

October 2013

FDP3651U — N-Channel PowerTrench

MOSFET

www.fairchildsemi.com

FDP3651U

Features Applications

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

N-Channel PowerTrench

MOSFET

100 V, 80 A, 18 mΩ

DS(on)

= 15 mΩ ( Typ.) @ V

= 10 V, I

= 80 A

High Performance Trench Technology for Extremely

Low R

DS(on)

Low Miller Charge

UIS Capability (Single Pulse and Repetitive Pulse)

Consumer Appliances

Synchronous Rectification

Battery Protection Circuit

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

•

TO-220

FDP3651U Rev. C1

FDP3651U Unit

Thermal Resistance , Junction to Case, Max.

Thermal Resistance , Junction to Ambient, Max.

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter

DSS

Drain to Source Voltage 100 V

GSS

Gate to Source Voltage ±20 V

Drain Current - Continuous

- Pulsed (Note 1) 320

Power Dissipation 255 W

Single Pulsed Avalanche Energy (Note 2) 266 mJ

, T

STG

Operating and Storage Temperature -55 to 175 °C

Maximum lead temperature soldering purposes,

1/8” from case for 5 seconds

300 °C

θJA

62 °C/W

θJC

0.59 °C/W

Device Marking Device Reel Size Tape Width Quantity

FDP3651U FDP3651U Tube N/A 50 units

Summary of content (7 pages)

PAGE 1
FDP3651U N-Channel PowerTrench® MOSFET 100 V, 80 A, 18 mΩ Features Applications • RDS(on) = 15 mΩ ( Typ.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max 100 - - V - - 1 µA Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 80V VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V TC=150°C - - 250 µA - - ±100 nA V On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = -250µA 3.5 4.5 5.
PAGE 3
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 20V 100 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 120 VGS = 10V 80 VGS = 8V 60 40 VGS = 7V 20 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 4 VGS = 8V 3 2 VGS = 10V 1 VGS = 20V 0 0 40 60 80 100 120 60 2.4 RDS(on), ON-RESISTANCE (mΩ) ID = 80A VGS = 10V 2.0 1.6 1.2 0.8 0.4 -80 -40 0 40 80 120 160 ID = 80A 50 TJ = 175oC 30 20 TJ = 25oC 10 0 200 PULSE DURATION = 80µs DUTY CYCLE = 0.
PAGE 4
10000 VGS, GATE TO SOURCE VOLTAGE(V) 10 Ciss VDD = 45V VDD = 50V 8 CAPACITANCE (pF) VDD = 55V 6 4 2 0 Coss 1000 Crss 100 f = 1MHz VGS = 0V 0 10 20 30 40 50 10 0.1 60 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 100 TJ = 25oC 10 TJ = 150oC 1 -3 10 -2 10 -1 0 1 2 100 PACKAGE MAY LIMIT CURRENT IN THIS REGION 80 VGS=10V 60 VGS=8V 40 20 0 25 3 10 10 10 10 tAV, TIME IN AVALANCHE(ms) 10 Figure 9.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJc x RθJc + Tc 1E-3 -5 10 -4 -3 10 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 13. Transient Thermal Response Curve ©2006 Fairchild Semiconductor Corporation FDP3651U Rev. C1 5 www.fairchildsemi.
PAGE 6
FDP3651U — N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220 3L Figure 14. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.