Datasheet

December 2013
FDP52N20 / FDPF52N20T — N-Channel UniFET
TM
MOSFET
©2007 Fairchild Semiconductor Corporation
FDP52N20 / FDPF52N20T Rev. C1
www.fairchildsemi.com
1
FDP52N20 / FDPF52N20T
N-Channel UniFET
TM
MOSFET
200 V, 52 A, mΩ
Features
•R
DS(on)
= 41 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 26 A
•
Low Gate Charge (Typ. 49 nC)
•
Low C
RSS
(Typ. 66 pF)
• 100% Avalanche Tested
•
RoHS Compliant
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter
FDP52N20 FDPF52N20T
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.35 3.3
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
Symbol Parameter FDP52N20 FDPF52N20T
Unit
V
DSS
Drain to Source Voltage 200 V
V
GSS
Gate to Source Voltage ±30 V
I
D
D r a i n C u r r e n t
- Continuous (T
C
= 25
o
C)
52 52*
A
- Continuous (T
C
= 100
o
C)
33 33*
I
DM
D r a i n C u r r e n t - P ul s e d (Note 1) 208 208* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 2520 mJ
I
AR
Avalanche Current (Note 1) 52 A
E
AR
Repetitive Avalanche Energy (Note 1) 35.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 357 38.5 W
- Derate above 25
o
C 2.86 0.3 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
o
C
*Drain current limited by maximum junction temperature
TO-220
G
D
S
TO-220F
G
D
S
G
S
D