Datasheet

October 2013
FDP55N06 / FDPF55N06 — N-Channel UniFET
TM
MOSFET
©2005 Fairchild Semiconductor Corporation
FDP55N06 / FDPF55N06 Rev. C0
www.fairchildsemi.com
1
FDP55N06 / FDPF55N06
N-Channel UniFET
TM
MOSFET
60 V, 55 A, 22 m
Features
R
DS(on)
= 22 m @V
GS
= 10 V, I
D
= 27.5 A
Low Gate Charge ( Typ. 30 nC)
Low Crss ( Typ. 60 pF)
100% Avalanc
he Tested
Description
UniFET
TM
MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device
family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
TO-220
G
D
S
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FDP55N06 FDPF55N06 Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
55 55 * A
- Continuous (T
C
= 100°C)
34.8 34.8 * A
I
DM
Drain Current - Pulsed
(Note 1)
220 220 * A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
480 mJ
I
AR
Avalanche Current
(Note 1)
55 A
E
AR
Repetitive Avalanche Energy
(Note 1)
11.4 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
114 48 W
- Derate above 25°C 0.9 0.4 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FDP55N06 FDPF55N06
Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.1 2.58 °C/W
R
θJS
Thermal Resistance, Case-to-Sink, Typ.
0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max,
62.5 62.5 °C/W

Summary of content (10 pages)