Datasheet

©2006 Fairchild Semiconductor Corporation
FDP5800 Rev. C2
www.fairchildsemi.com
2
FDP5800 — N-Channel Logic Level PowerTrench
®
MOSFET
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDP5800 FDP5800 TO-220 Tube N/A N/A 50 units
Symbol Parameter Conditions Min. Typ. Max. Unit
B
VDSS
Drain-Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V, T
J
=25
o
C60 -- -- V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 48 V
V
GS
= 0 V
-- -- 1 μA
T
J
= 150°C -- -- 500 μA
I
GSS
Gate-Body Leakage Current, Forward V
GS
= ±20 V, V
DS
= 0 V -- -- ±100 nA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA1.0--2.5V
R
DS(on)
Static Drain-Source On Resistance
V
GS
= 10 V , I
D
= 80 A -- 4.6 6.0 mΩ
V
GS
=4.5 V , I
D
= 80 A -- 5.9 7.2 mΩ
V
GS
= 5 V , I
D
= 80 A -- 5.6 7.0 mΩ
V
GS
=10 V, I
D
= 80 A,
T
J
= 175
o
C
-- 10.4 12.6 mΩ
C
iss
Input Capacitance
V
DS
= 15 V,V
GS
= 0 V,
f = 1 MHz
-- 6890 9160 pF
C
oss
Output Capacitance -- 750 1000 pF
C
rss
Reverse Transfer Capacitance -- 295 445 pF
R
G
Gate Resistance V
GS
= 0.5 V, f = 1 MHz -- 1.2 -- Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0 V to 10 V
V
DS
= 30 V,
I
D
= 80 A,
I
g
= 1 mA
-- 112 145 nC
Q
g(TH)
Total Gate Charge at 5V V
GS
= 0 V to 5 V -- 58 -- nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 V to 1 V -- 7.0 -- nC
Q
gs
Gate to Source Gate Charge -- 23 -- nC
Q
gs2
Gate Charge Threshold to Plateau -- 13 -- nC
Q
gd
Gate to Drain “Miller” Charge -- 18 -- nC
t
ON
Turn-On Time
V
DD
= 30 V, I
D
= 80 A,
V
GS
= 10 V, R
G
= 1.5 Ω
-- 37 85 ns
t
d(on)
Turn-On Delay Time -- 18 46 ns
t
r
Turn-On Rise Time -- 19 47 ns
t
d(off)
Turn-Off Delay Time -- 55 120 ns
t
f
Turn-Off Fall Time -- 9 28 ns
t
OFF
Turn-Off Time -- 64 138 ns
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
SD
= 80 A -- -- 1.25 V
V
GS
= 0 V, I
SD
= 40 A -- -- 1.0 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 60 A,
dI
F
/dt = 100 A/μs
-- 58 -- ns
Q
rr
Reverse Recovery Charge -- 106 -- nC
Notes:
1: L = 1 mH, I
AS
= 36 A, V
DD
= 54 V, V
GS
= 10 V, R
G
= 25 Ω, Starting T
J
= 25
o
C