Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP6030BL, MOSFET

FDP6030BL/FDB6030BL

FDP6030BL/FDB6030BL Rev.C

July 2000

2000 Fairchild Semiconductor International

FDP6030BL/FDB6030BL

N-Channel Logic Level PowerTrench





MOSFET

Features

• 40 A, 30 V. R

DS(ON)

= 0.018 Ω @ V

= 10 V

DS(ON)

= 0.024 Ω @ V

= 4.5 V.

• Critical DC electrical parameters specified at elevated

temperature.

• Rugged internal source-drain diode can eliminate the

need for an external Zener diode transient suppressor.

• High performance trench technology for

extremely low R

DS(ON)

• 175°C maximum junction temperature rating.

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol Parameter

FDP6030BL FDB6030BL

Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage

Maximum Drain Current - Continuous

(Note 1)

- Pulsed 120

Total Power Dissipation @ T

= 25

60 W

Derate above 25

0.36

, T

STG

Operating and Storage Junction Temperature Range -65 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case 2.5

C/W

Thermal Resistance, Junction-to-Ambient 62.5

C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDB6030BL FDB6030BL 13’’ 24mm 800

FDP6030BL FDP6030BL Tube N/A 45

TO-220

FDP Series

General Description

This N-Channel Logic Level MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(on)

specifications resulting in DC/DC power supply designs

with higher overall efficiency.

TO-263AB

FDB Series

Summary of content (5 pages)

PAGE 1
FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 40 A, 30 V. RDS(ON) = 0.018 Ω @ VGS = 10 V RDS(ON) = 0.024 Ω @ VGS = 4.5 V.
PAGE 2
Symbol TC = 25°C unless otherwise noted Parameter Test Conditions DRAIN-SOURCE AVALANCHE RATINGS WDSS IAR Min Typ Max Units 150 mJ 40 A (Note 1) Single Pulse Drain-Source VDD = 15 V, ID = 40 A Avalanche Energy Maximum Drain-Source Avalnche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate-Body Leakag
PAGE 3
FDP6030BL/FDB6030BL Typical Characteristics 2.6 VGS = 10V 6.0V 5.0V 4.5V 70 60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 80 4.0V 50 40 3.5V 30 20 3.0V 10 2.4 2.2 VGS = 3.0V 2 1.8 3.5V 1.6 4.0V 1.4 5.0V 7.0V 1 10V 0.8 0 0 1 2 3 4 0 5 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.8 ID = 20A VGS = 10V 1.
PAGE 4
(continued) 1600 ID = 20A VDS = 5V 10V 8 f = 1 MHz VGS = 0 V 1400 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 1200 CISS 1000 800 600 400 COSS 200 CRSS 0 0 0 5 10 15 20 0 25 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 2500 1000 VGS = 10V SINGLE PULSE TC = 25 C RDS(ON) LIMIT POWER (W) 10µs 100µs 1ms o 100 SINGLE PULSE R θJC =2.
PAGE 5
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