Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP65N06, MOSFET

November 2013

FDP65N06 — N-Channel UniFET

MOSFET

FDP65N06 Rev. C0

www.fairchildsemi.com

Features

•

DS(on)

= 13 mΩ (Typ.) @ V

= 10 V, I

= 32.5 A

•

Low Gate Charge ( typical 33 nC)

•

Low Crss ( typical 35 pF)

•

Fast Switching

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

N-Channel UniFET

MOSFET

60 V, 65 A, 16 mΩ

FDP65N06

• Improved dv/dt Capability

TO-220

Thermal Characteristics

Symbol Parameter FDP65N06 Units

DSS

Drain-Source Voltage 60 V

Drain Current 65 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) 41 A

Drain Current - Pulsed

(Note 1)

260 A

GSS

Gate-Source Voltage ± 20 V

Single Pulsed Avalanche Energy

(Note 2)

430 mJ

Avalanche Current

(Note 1)

65 A

Repetitive Avalanche Energy

(Note 1)

13.5 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C) 135 W

- Derate above 25°C 1.08 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds

300 °C

Symbol Parameter FDP65N06 Units

θJC

Thermal Resistance, Junction-to-Case, Max.

0.92 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5 °C/W

Summary of content (8 pages)

PAGE 1
FDP65N06 N-Channel UniFETTM MOSFET 60 V, 65 A, 16 mΩ Features Description • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 32.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Device Marking Device Package Reel Size Tape Width Quantity FDP65N06 FDP65N06 TO-220 Tube N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Test Conditions Min Typ Max Units 60 - - V - V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 300 o 150 C V GS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V B ottom : 5 .5 V ID, Drain Current [A] 100 ID, Drain Current [A] Top : 100 o 25 C 10 o 10 -5 5 C * 2 0.1 otes : 1. 250 µ s Pulse Test o 2. T C = 25 C 1 * N o te s : 1 . V DS = 4 0 V 2 . 2 5 0 µ s P u ls e T e s t 1 2 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 * Not s : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 2. ID = 32.5 A 0.5 0.0 -100 200 -50 0 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs.
PAGE 5
FDP65N06 — N-Channel UniFETTM MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14.
PAGE 6
FDP65N06 — N-Channel UniFETTM MOSFET Figure 15.
PAGE 7
FDP65N06 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.