Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP75N08A, MOSFET

December 2013

FDP75N08A — N-Channel UniFET

MOSFET

FDP75N08A Rev. C0

www.fairchildsemi.com

Features

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

TO-220

FDP75N08A

N-Channel UniFET

MOSFET

V, 75 A, 11 mΩ

•

75 A, 75 V, R

DS(on)

= 11 mΩ @ V

= 10 V

•

Low Gate Charge (Typ. 145 nC)

•

Low Crss (Typ. 86 pF)

•

Improved dv/dt Capability

Fast Switching

Thermal Characteristics

Symbol Parameter FDP75N08A

Unit

DSS

Drain-Source Voltage 75 V

Drain Current 75 A- Continuous (T

= 25°C)

- Continuous (T

= 100°C) 47 A

Drain Current - Pulsed

(Note 1)

300 A

GSS

Gate-Source Voltage ± 20 V

Single Pulsed Avalanche Energy

(Note 2)

1738 mJ

Avalanche Current

(Note 1)

75 A

Repetitive Avalanche Energy

(Note 1)

13.7 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C) 137 W

- Derate Above 25°C

1.09 W/°C

, T

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds

300 °C

Symbol Parameter FDP75N08A

Unit

θJC

Thermal Resistance, Junction-to-Case, Max.

0.91 °C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max.

62.5 °C/W

Summary of content (8 pages)

PAGE 1
FDP75N08A N-Channel UniFETTM MOSFET 75 V, 75 A, 11 mΩ Description Features • • • • • UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Device Marking FDP75N08A Device FDP75N08A Electrical Characteristics Symbol Package TO-220 Reel Size Tube Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 75 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0V 9.0V 7.5V 7.0V 6.5v 6.0V 5.5V 5.0V Bottom : 4.5V 2 10 100 ID, Drain Current [A] ID, Drain Current [A] Top: 0 150 C 0 -55 C 0 25 C 10 * Note : 1. VDS=40V 2. 250µs Pulse Test * Note : 1. 250µs Pulse Test 0 2. TC=25 C 1 1 10 0 2 1 10 10 8 6 4 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Not s : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * N tes : 1. VGS = 10 V 2. ID = 37.5 A 0.5 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9.
PAGE 5
FDP75N08A — N-Channel UniFETTM MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14.
PAGE 6
FDP75N08A — N-Channel UniFETTM MOSFET Figure 15.
PAGE 7
FDP75N08A — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.