Datasheet

FDP75N08A — N-Channel UniFET
TM
MOSFET
©2006 Fairchild Semiconductor Corporation
FDP75N08A Rev. C0
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Device Marking Device Package Reel Size Tape Width Quantity
FDP75N08A FDP75N08A
TO-220
N/A 50 units
Tube
Symbol Parameter Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
= 0 V, I
D
= 250 µA75----V
∆BV
DSS
/ ∆T
J
Breakdown Voltage Temperature Coefficient I
D
= 250 µA, Referenced to 25°C -- 0.6 -- V/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 75 V, V
GS
= 0 V -- -- 1 µA
V
DS
= 60 V, T
C
= 125°C -- -- 10 µA
I
GSSF
Gate-Body Leakage Current, Forward V
GS
= 20 V, V
DS
= 0 V -- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse V
GS
= -20 V, V
DS
= 0 V -- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250 µA2.0--4.0V
R
DS(on)
Static Drain-Source On-Resistance V
GS
= 10 V, I
D
= 37.5 A -- 9.4 11 mΩ
g
FS
Forward Transconductance V
DS
= 40 V, I
D
= 37.5 A -- 15 -- S
Dynamic Characteristics
C
iss
Input Capacitance V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 3437 4468 pF
C
oss
Output Capacitance -- 738 959 pF
C
rss
Reverse Transfer Capacitance -- 86 129 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
DD
= 37.5 V, I
D
= 75A,
R
G
= 25 Ω
(Note 4)
--
43 95
ns
t
r
Turn-On Rise Time --
212 434
ns
t
d(off)
Turn-Off Delay Time --
273 556
ns
t
f
Turn-Off Fall Time --
147 303
ns
Q
g
Total Gate Charge V
DS
= 60 V, I
D
= 75A,
V
GS
= 10 V
(Note 4)
--
80 104
nC
Q
gs
Gate-Source Charge --
20
-- nC
Q
gd
Gate-Drain Charge --
24
-- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 75 A -- -- 1.4 V
t
rr
Reverse Recovery Time V
GS
= 0 V, I
S
= 75 A,
dI
F
/ dt = 100 A/µs
-- 62 -- ns
Q
rr
Reverse Recovery Charge -- 145 --
nC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: L = 206 µH, I
AS
= 75 A, V
DD
= 50 V, R
G
=
25 Ω, starting T
J
= 25°C.
3: I
SD
≤ 75A, di/dt ≤ 200A/
µs, V
DD
≤ BV
DSS
, starting T
J
= 25°C.
4: Essentially independent of operating temperature typical characteristics.