Datasheet

FDP7N60NZ / FDPF7N60NZ — N-Channel UniFET
TM
II MOSFET
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
45678
0.1
1
10
100
-55
o
C
150
o
C
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate-Source Voltage[V]
0.1 1 10 20
0.1
1
10
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
I
D
, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
0.40.60.81.01.21.4
1
10
100
Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0 2 4 6 8 10 12 14
0.8
1.0
1.2
1.4
1.6
1.8
2.0
* Note : T
J
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(on)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0 2 4 6 8 10 12 14
0
2
4
6
8
10
* Note : I
D
= 6.5A
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
0.1 1 10
1
10
100
1000
5000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
30