Datasheet

©2009 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FDP8440 Rev. C2
FDP8440 N-Channel PowerTrench
®
MOSFET
April 2013
FDP8440
N-Channel PowerTrench
®
MOSFET
40 V, 277 A, 2.2 mΩ
Features
•R
DS(on)
= 1.64 mΩ (Typ.)@ V
GS
= 10 V, I
D
= 80 A
•Q
g(tot)
= 345 nC (Typ.)@ V
GS
= 10 V
• Low Miller Charge
•Low Q
rr
Body Diode
• UIS Capability (Single P
ulse and Repetitive Pulse)
•RoHS Compliant
Applications
• Power Tools
• Motor Drives and Uninterruptible Power Supplies
• Synchronous Rectification
• Battery Protection Circuit
D
G
S
TO-220
G
S
D
MOSFET Maximum Ratings
Symbol Parameter FDP8440 Unit
V
DSS
Drain to Source Voltage 40 V
V
GSS
Gate to Source Voltage ±20 V
I
D
D r a i n C u r r e n t - Continuous (T
C
= 25
o
C, Silicon Limited)
- Continuous (T
C
= 100
o
C, Silicon Limited)
- Continuous (T
C
= 25
o
C, Package Limited)
277*
196*
100
A
I
DM
Drain Current - Pulsed (Note 1) 500 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 1682 mJ
P
D
Power Dissipation
(T
C
= 25
o
C) 306 W
- Derate above 25
o
C 2.04 W/
o
C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Thermal Characteristics
R
θJC
Thermal Resistance, Junction to Case, Max. 0.49
o
C/W
R
θCS
Thermal Resistance, Case to Sink (Typ.) 0.5
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5
o
C/W
T
C
= 25
o
C unless otherwise noted
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.