FDP8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.7mΩ Features Applications Typ rDS(on) = 2.1mΩ at VGS = 10V, ID = 80A Solenoid and Motor Drivers Typ Qg(10) = 215nC at VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) RoHS Compliant ©2012 Fairchild Semiconductor Corporation FDP8441 Rev. C0 1 www.fairchildsemi.
Symbol VDS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V Drain Current Continuous (TC < 160oC, VGS = 10V) 80 Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 62oC/W) ID 23 Pulsed EAS PD TJ, TSTG A See Figure 4 Single Pulse Avalanche Energy (Note 1) 947 Power dissipation W 2 W/oC -55 to 175 oC Derate above 25oC Operating and Storage Temperature mJ 300 Thermal Characteristics RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance
Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 77 ns td(on) Turn-On Delay Time - 23 - ns tr Turn-On Rise Time - 24 - ns td(off) Turn-Off Delay Time - 75 - ns tf Turn-Off Fall Time - 17.9 - ns toff Turn-Off Time - - 147 ns ISD = 35A - 0.8 1.25 V ISD = 15A - 0.8 1.0 V VDD = 20V, ID = 35A VGS = 10V, RGS = 1.
300 1.0 250 ID, DRAIN CURRENT (A) POWER DISSIPATION MULIPLIER 1.2 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 150 100 50 50 75 100 TC, CASE Figure 1. Normalized Power Dissipation vs Case Temperature VGS = 10V 200 0 25 175 CURRENT LIMITED BY PACKAGE 125 150 175 TEMPERATURE(oC) Figure 2. Maximum Continuous Drain Current vs Case Temperature DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 0.
4000 ID, DRAIN CURRENT (A) 1000 IAS, AVALANCHE CURRENT (A) 500 10us If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 100us 100 10 LIMITED BY PACKAGE 1ms 1 0.1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) T = 25oC C 1 10ms DC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0.01 100 0.
1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250µA 1.0 0.8 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) Ciss 10000 Coss Crss f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 10 ID = 80A VDD = 15V 8 VDD = 25V 6 VDD = 20V 4 2 0 0 50 100 150 200 250 Qg, GATE CHARGE(nC) Figure 13.
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