Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP8860, MOSFET

September 2006

FDP8860 N-Channel PowerTrench

MOSFET

FDP8860 Rev.B

www.fairchildsemi.com

FDP8860

N-Channel PowerTrench

MOSFET

30V, 80A, 2.5mΩ

Features

 Max r

DS(on)

= 2.5mΩ at V

= 10V, I

= 80A

 Max r

DS(on)

= 2.9mΩ at V

= 4.5V, I

= 80A

 Low Miller Charge

 Low Q

Body Diode

 UIL Capability (Single Pulse and Repetitive Pulse)

 RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

been optimized for low gate charge, low r

DS(on)

and fast

switching speed.

Application

 DC - DC Conversion

 Start / Alternator Sytems

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 80

A -Continuous (Silicon limited) T

= 25°C 219

-Pulsed (Note 1) 556

Single Pulse Avalanche Energy (Note 2) 673 mJ

Power Dissipation 254 W

, T

STG

Operating and Storage Temperature -55 to +175 °C

θJC

Thermal Resistance, Junction to Case TO220 0.59

°C/W

θJA

Thermal Resistance, Junction to Ambient TO220 62

Device Marking Device Package Reel Size Tape Width Quantity

FDP8860 FDP8860 TO220AB Tube N/A 50 units

TO-220

FDP Serie

Summary of content (6 pages)

PAGE 1
FDP8860 N-Channel PowerTrench® MOSFET 30V, 80A, 2.5mΩ Features tm General Description Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 80A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Max rDS(on) = 2.9mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 ID = 1mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C 22 VDS = 24V, 1 VGS = 0V TJ = 150°C 250 VGS = ±20V µA ±100 nA 2.
PAGE 3
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 320 VGS = 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = 4V 240 VGS = 4.5V VGS = 10V VGS = 3.5V 160 80 VGS =3V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 1.5 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) 1.7 1.6 VGS = 3V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3 VGS = 3.5V VGS = 4V 2 VGS = 4.5V 1 VGS = 10V 0 0 80 160 240 ID, DRAIN CURRENT(A) 320 Figure 2.
PAGE 4
20000 VDD = 12V 8 6 VDD = 15V 4 VDD = 18V 2 0 0 40 80 120 Qg, GATE CHARGE(nC) Ciss Coss Crss 1000 500 160 Figure 7. Gate Charge Characteristics 0.1 200 280 100 240 TJ = 25oC 10 TJ = 175oC -2 10 -1 10 0 10 1 10 2 10 3 10 160 80 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 100us 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 1E-3 -5 10 t2 SINGLE PULSE -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC -3 -2 10 10 t, RECTANGULAR PULSE DURATION (s) -1 10 0 10 1 10 Figure 13. Transient Thermal Response Curve FDP8860 Rev.B 5 www.fairchildsemi.
PAGE 6
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