May 2008 FDP8880 / FDB8880 N-Channel PowerTrench® MOSFET tmM 30V, 54A, 11.6mΩ Features rDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 40A rDS(ON) = 11.6mΩ, VGS = 10V, ID = 40A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Symbol VDSS Drain to Source Voltage Parameter Ratings 30 Units V VGS Gate to Source Voltage ±20 V 54 A Drain Current Continuous (TC = 25oC, VGS = 10V) o ID Continuous (TC = 25 C, VGS = 4.5V) 48 A Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) 11 A Pulsed E AS Figure 4 A 31 mJ Single Pulse Avalanche Energy (Note 1) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature 55 W 0.
CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance Qg(TOT) Total Gate Charge at 10V - 1240 - - 255 - pF - 147 - pF VGS = 0.5V, f = 1MHz - 2.
FDP8880 / FDB8880 Typical Characteristics TC = 25°C unless otherwise noted 60 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 40 20 0.2 0 0 0 25 50 75 100 150 125 175 25 TC , CASE TEMPERATURE (o C) Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 150 TC, CASE TEMPERATURE (oC) 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.
FDP8880 / FDB8880 Typical Characteristics TC = 25°C unless otherwise noted 400 500 IAS, AVALANCHE CURRENT (A) 100 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10µs 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 100 STARTING T J = 25o C 10 STARTING TJ = 150oC DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 0.
FDP8880 / FDB8880 Typical Characteristics TC = 25°C unless otherwise noted 1.1 1.5 ID = 250µA NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS, ID = 250µA 1.2 0.9 0.6 0.3 -80 -40 0 40 80 120 160 1.0 0.9 -80 200 -40 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 80 120 160 200 VGS , GATE TO SOURCE VOLTAGE (V) 10 CISS = CGS + C GD 1000 C, CAPACITANCE (pF) 40 Figure 12.
VDS BVDSS tP L VDS VARY tP TO OBTAIN REQUIRED PEAK IAS IAS + RG VDD VDD - VGS DUT tP IAS 0V 0 0.01Ω tAV Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDS VDD Qg(TOT) VDS L VGS VGS = 10V VGS Qg(5) + Qgs2 VDD VGS = 5V DUT VGS = 1V Ig(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 Figure 17. Gate Charge Test Circuit Figure 18.
.SUBCKT FDP8880 2 1 3 ; rev October 2004 Ca 12 8 9.5e-10 Cb 15 14 9.5e-10 Cin 6 8 1.15e-9 LDRAIN DPLCAP 10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD RLDRAIN RSLC1 51 5 51 EVTHRES + 19 8 + LGATE GATE 1 ESLC 11 + 17 EBREAK 18 - 50 RDRAIN 6 8 ESG DBREAK + RSLC2 Ebreak 11 7 17 18 32.88 Eds 14 8 5 8 1 Egs 13 8 6 8 1 Esg 6 10 6 8 1 Evthres 6 21 19 8 1 Evtemp 20 6 18 22 1 It 8 17 1 DRAIN 2 5 EVTEMP RGATE + 18 22 9 20 21 16 DBODY MWEAK 6 MMED MSTRO RLGATE Lgate 1 9 5.
rev October 2004 template FDP8880 n2,n1,n3 electrical n2,n1,n3 { var i iscl dp..model dbodymod = (isl=3e-12,ikf=10,nl=1.01,rs=5e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-11,xti=2) dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.8e-6) dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45) m..model mstrongmod = (type=_n,vto=2.10,kp=170,is=1e-30, tox=1) m..model mmedmod = (type=_n,vto=1.75,kp=10,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.39,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..
th JUNCTION REV 23 December 2003 FDP8880T CTHERM1 TH 6 8e-4 CTHERM2 6 5 1e-3 CTHERM3 5 4 2.5e-3 CTHERM4 4 3 2.6e-3 CTHERM5 3 2 8e-3 CTHERM6 2 TL 1.5e-2 RTHERM1 CTHERM1 6 RTHERM1 TH 6 1.44e-1 RTHERM2 6 5 1.9e-1 RTHERM3 5 4 3.0e-1 RTHERM4 4 3 4.0e-1 RTHERM5 3 2 5.7e-1 RTHERM6 2 TL 5.8e-1 RTHERM2 CTHERM2 5 SABER Thermal Model SABER thermal model FDP8880T template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 =8e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2.5e-3 ctherm.ctherm4 4 3 =2.
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.
