Datasheet

©2008 Fairchild Semiconductor Corporation FDP8896 Rev. A2
FDP8896
Electrical Characteristics T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
Drain-Source Diode Characteristics
Notes:
1: Package current limitation is 80A.
2: Starting T
J
= 25°C, L = 36µH, I
AS
= 64A, V
DD
= 27V, V
GS
= 10V.
3: Pulse width = 100s.
4
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250µA, V
GS
= 0V 30 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 24V - - 1
µA
V
GS
= 0V T
C
= 150
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(TH)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250µA 1.2 - 2.5 V
r
DS(ON)
Drain to Source On Resistance
I
D
= 35A, V
GS
= 10V - 0.0050 0.0059
Ω
I
D
= 35A, V
GS
= 4.5V - 0.0060 0.0070
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
- 0.0078 0.0094
C
ISS
Input Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
- 2525 - pF
C
OSS
Output Capacitance - 490 - pF
C
RSS
Reverse Transfer Capacitance - 300 - pF
R
G
Gate Resistance V
GS
= 0.5V, f = 1MHz - 2.3 - Ω
Q
g(TOT)
Total Gate Charge at 10V V
GS
= 0V to 10V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
-4867nC
Q
g(5)
Total Gate Charge at 5V V
GS
= 0V to 5V - 25 36 nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0V to 1V - 2.3 3.0 nC
Q
gs
Gate to Source Gate Charge - 8 - nC
Q
gs2
Gate Charge Threshold to Plateau - 5.7 - nC
Q
gd
Gate to Drain “Miller” Charge - 9.5 - nC
t
ON
Turn-On Time
V
DD
= 15V, I
D
= 35A
V
GS
= 4.5V, R
GS
= 6.2Ω
- - 168 ns
t
d(ON)
Turn-On Delay Time - 9 - ns
t
r
Rise Time - 103 - ns
t
d(OFF)
Turn-Off Delay Time - 56 - ns
t
f
Fall Time - 44 - ns
t
OFF
Turn-Off Time - - 150 ns
V
SD
Source to Drain Diode Voltage
I
SD
= 35A - - 1.25 V
I
SD
= 20A - - 1.0 V
t
rr
Reverse Recovery Time I
SD
= 35A, dI
SD
/dt = 100A/µs- -27ns
Q
RR
Reverse Recovered Charge I
SD
= 35A, dI
SD
/dt = 100A/µs- -12nC