Datasheet

November 2013
FDPF085N10A — N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. C1
www.fairchildsemi.com
1
FDPF085N10A
N-Channel PowerTrench
®
MOSFET
100 V, 40 A, 8.5 mΩ
Features
•R
DS(on)
= 6.5 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 40 A
Fast Switching Speed
Low Gate Charge, Q
G
= 31 nC (Typ.)
High Performance Trench Technology for Extremely Low
R
DS(on)
High Power and Current Handling Capability
RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench
®
process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
Consumer Appliances
•LED TV
Synchronous Rectification for ATX / Sever / Telecom PSU
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
TO-220F
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDPF085N10A Unit
V
DSS
Drain to Source Voltage 100 V
V
GSS
Gate to Source Voltage ±20 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 40
A
- Continuous (T
C
= 100
o
C) 28
I
DM
Drain Current - Pulsed (Note 1) 160 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 269 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 33.3 W
- Derate Above 25
o
C0.22W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FDPF085N10A
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 4.5
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5

Summary of content (9 pages)