Datasheet

FDP10N60NZ / FDPF10N60NZ — N-Channel UniFET
TM
II MOSFET
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics T
C
= 25
o
C unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDP10N60NZ FDP10N60NZ
TO-220 Tube N/A N/A 50 units
FDPF10N60NZ FDPF10N60NZ
TO-220F Tube N/A N/A 50 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V, T
J
= 25
o
C
600
--V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25
o
C-0.6-V/
o
C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, T
C
= 125
o
C--10
I
GSS
Gate to Body Leakage Current V
GS
= ±25 V, V
DS
= 0 V - - ±10 μA
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 3.0 - 5.0 V
R
DS(on)
Static Drain to Source On Resistance V
GS
= 10 V, I
D
= 5 A - 0.64 0.75 Ω
g
FS
Forward Transconductance V
DS
= 20 V, I
D
= 5 A - 14 - S
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
- 1110 1475 pF
C
oss
Output Capacitance - 130 175 pF
C
rss
Reverse Transfer Capacitance - 10 15 pF
Q
g
Total Gate Charge at 10V
V
DS
= 480 V, I
D
= 10 A,
V
GS
= 10 V
(Note 4)
-2330nC
Q
gs
Gate to Source Gate Charge - 6 - nC
Q
gd
Gate to Drain “Miller” Charge - 8 - nC
t
d(on)
Turn-On Delay Time
V
DD
= 300 V, I
D
= 10 A,
V
GS
= 10 V, R
G
= 25 W
(Note 4)
-2560ns
t
r
Turn-On Rise Time - 50 110 ns
t
d(off)
Turn-Off Delay Time - 70 150 ns
t
f
Turn-Off Fall Time - 50 110 ns
I
S
Maximum Continuous Drain to Source Diode Forward Current - - 10 A
I
SM
Maximum Pulsed Drain to Source Diode Forward Current - - 40 A
V
SD
Drain to Source Diode Forward Voltage V
GS
= 0 V, I
SD
= 10 A - - 1.4 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
SD
= 10 A,
dI
F
/dt = 100 A/μs
- 300 - ns
Q
rr
Reverse Recovery Charge - 2.0 - μC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 11 mH, I
AS
= 10 A, V
DD
= 50 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
10 A, di/dt 200 A/μs, V
DD
BV
DSS
, starting T
J
= 25°C.
4. Essentially independent of operating temperature typical characteristics.