Datasheet

FDP10N60NZ / FDPF10N60NZ — N-Channel UniFET
TM
II MOSFET
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
- FDP10N60NZ - FDPF10N60NZ
Figure 11. Maximum Drain Current vs.
Case Temperature
-100 -50 0 50 100 150
0.90
0.95
1.00
1.05
1.10
1.15
*Notes:
1. V
GS
= 0V
2. I
D
= 250μA
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-100 -50 0 50 100 150
0.25
0.5
1.0
1.5
2.0
2.5
2.75
*Notes:
1. V
GS
= 10V
2. I
D
= 5A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
0.1 1 10 100 1000 3000
0.01
0.1
1
10
100
30μs
100μs
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
1 10 100 1000 3000
0.01
0.1
1
10
100
30μs
100μs
1ms
10ms
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
2
4
6
8
10
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]