Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDPF16N50, MOSFET

FDP16N50 / FDPF16N50 Rev. B

FDP16N50 / FDPF16N50 500V N-Channel MOSFET

April 2007

UniFET

FDP16N50 / FDPF16N50

500V N-Channel MOSFET

Features

• 16A, 500V, R

DS(on)

= 0.38Ω @V

= 10 V

• Low gate charge ( typical 32 nC)

•Low C

rss

( typical 20 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

TO-220

FDP Series

TO-220F

FDPF Series

Symbol Parameter FDP16N50 FDPF16N50 Unit

DSS

Drain-Source Voltage 500 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

9.6

16 *

9.6 ∗

Drain Current - Pulsed

(Note 1)

64 64 ∗ A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

780 mJ

Avalanche Current (Note 1) 16 A

Repetitive Avalanche Energy (Note 1) 20 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate above 25°C

200

1.59

38.5

0.3

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter FDP16N50 FDPF16N50 Unit

θJC

Thermal Resistance, Junction-to-Case 0.63 3.3 °C/W

θCS

Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W

θJA

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

* Drain current limited by maximum junction temperature

Summary of content (10 pages)

PAGE 1
UniFET TM FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description • 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
PAGE 2
Device Marking Device Package Reel Size Tape Width Quantity FDP16N50 FDP16N50 TO-220 - - 50 FDPF16N50 FDPF16N50 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.
PAGE 3
Figure 1. On-Region Characteristics VGS 2 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C o -55 C * Notes : 1. 250μs Pulse Test -1 * Notes : 1. VDS = 40V o 10 2. TC = 25 C 2. 250μs Pulse Test 0 -1 0 10 10 1 10 10 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250μA 0.8 -100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 8 A -50 0 50 100 150 0.0 -100 200 o TJ, Junction Temperature [ C] -50 0 50 100 150 Figure 9-1. Maximum Safe Operating Area - FDP16N50 Figure 9-2.
PAGE 5
FDP16N50 / FDPF16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve - FDP16N50 0 D = 0 .5 10 0 .2 -1 0 .1 Z PDM 0 .0 5 t1 0 .0 2 * N o te s : 0 .0 1 θJC (t), Thermal Response 10 10 t2 o 1 . Z θ J C ( t) = 0 .6 3 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 -2 3 .
PAGE 6
FDP16N50 / FDPF16N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP16N50 / FDPF16N50 Rev. B 6 www.fairchildsemi.
PAGE 7
FDP16N50 / FDPF16N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP16N50 / FDPF16N50 Rev. B 7 www.fairchildsemi.
PAGE 8
FDP16N50 / FDPF16N50 500V N-Channel MOSFET Mechanical Dimensions TO - 220 Dimensions in Millimeters FDP16N50 / FDPF16N50 Rev. B 8 www.fairchildsemi.
PAGE 9
TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 FDP16N50 / FDPF16N50 Rev. B +0.10 0.50 –0.05 4.70 ±0.20 0.35 ±0.10 9 www.fairchildsemi.
PAGE 10
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