Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDPF16N50UT, MOSFET

November 2013

FDPF16N50UT — N-Channel UniFET

Ultra FRFET

MOSFET

FDPF16N50UT Rev C1

www.fairchildsemi.com

FDPF16N50UT

N-Channel UniFET

Ultra FRFET

MOSFET

500 V, 15 A, 48

0 mΩ

Features

•

DS(on)

= 370 mΩ ( Typ.) @ V

= 10 V, I

= 7.5 A

•

Low Gate Charge (Typ. 32 nC)

•

Low C

rss

(Typ. 20 pF)

•

100% Avalanche Tested

• Improved dv/dt Capability

•

RoHS Compliant

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology. This

MOSFET is tailored to reduce on-state resistance, and to provide

better switching performance and higher avalanche energy strength.

UniFET Ultra FRFET

MOSFET has much superior body diode

reverse recovery performance. Its t

is less than 50nsec and the

reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs

have over 200nsec and 4.5V/nsec respectively. Therefore UniFET

Ultra FRFET MOSFET can remove additional component and improve

system reliability in certain applications that require performance

improvement of the MOSFET’s body diode. This device family is

suitable for switching power converter applications such as power

factor correction (PFC), flat panel display (FPD) TV power, ATX and

electronic lamp ballasts.

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FDPF16N50UT

Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±30 V

Drain Current

- Continuous (T

= 25

15*

- Continuous (T

= 100

Drain Current - Pulsed (Note 1) 60* A

Single Pulsed Avalanche Energy (Note 2) 610 mJ

Avalanche Current (Note 1) 15 A

Repetitive Avalanche Energy (Note 1) 20 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

= 25

C) 38.5 W

- Derate above 25

C 0.3 W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

Symbol Parameter FDPF16N50UT

Unit

JC

Thermal Resistance, Junction to Case, Max.

3.3

C/W

JA

Thermal Resistance, Junction to Ambient, Max.

62.5

*Drain current limited by maximum junction temperature

TO-220F

Summary of content (8 pages)

PAGE 1
FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 15 A, 480 mΩ Features Description • RDS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance.
PAGE 2
Part Number FDPF16N50UT Top Mark FDPF16N50UT Electrical Characteristics Symbol Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 500 - - V ID = 250A, Referenced to 25 C - 0.
PAGE 3
Figure 1. On-Region Characteristics VGS 2 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C * Notes : 1. 250s Pulse Test -1 * Notes : 1. VDS = 40V 2. 250s Pulse Test o 10 2. TC = 25 C 0 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] 6 8 10 12 VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
(Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 2 10 10 s 1.1 ID, Drain Current [A] BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 * Notes : 1. VGS = 0 V 0.9 100 s 1 10 1 ms 10 ms 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC -1 * Notes : 10 2. ID = 250A o 1. TC = 25 C o 0.8 -100 2. TJ = 150 C 3.
PAGE 5
FDPF16N50UT — N-Channel UniFETTM Ultra FRFETTM MOSFET IG = const. Figure 11. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr tt onon td(off) t off tf Figure 12. Resistive Switching Test Circuit & Waveforms VGS Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDPF16N50UT Rev C1 5 www.fairchildsemi.
PAGE 6
FDPF16N50UT — N-Channel UniFETTM Ultra FRFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 14.
PAGE 7
FDPF16N50UT — N-Channel UniFETTM Ultra FRFETTM MOSFET Mechanical Dimensions Figure 15. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.