Datasheet
December 2013
FDPF17N60NT — N-Channel UniFET
TM
II MOSFET
©2009 Fairchild Semiconductor Corporation
FDPF17N60NT Rev. C1
www.fairchildsemi.com
1
FDPF17N60NT
N-Channel UniFET
TM
II MOSFET
600 V, 17 A, 340 mΩ
Features
•R
DS(on)
= 290 mΩ (Typ.) @ V
GS
= 10 V, I
D
= 8.5 A
• Low Gate Charge (Typ. 48 nC)
•Low C
rss
(Typ. 23 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-
state resistance among the planar MOSFET, and also provides
superior switching performance and higher avalanche energy
strength. In addition, internal gate-source ESD diode allows
UniFET II MOSFET to withstand over 2kV HBM surge stress.
This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel
display (FPD) TV power, ATX and electronic lamp ballasts.
TO-220F
G
D
S
G
S
D
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol Parameter FDPF17N60NT Unit
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 17*
A
- Continuous (T
C
= 100
o
C) 10.2*
I
DM
Drain Current - Pulsed (Note 1) 68* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 838 mJ
I
AR
Avalanche Current (Note 1) 17 A
E
AR
Repetitive Avalanche Energy (Note 1) 24.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 62.5 W
- Derate Above 25
o
C0.5W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FDPF17N60NT
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 2.0
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5