Datasheet
FDP20N50F/ FDPF20N50FT N-Channel UniFET
TM
FRFET
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com1
March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFET
TM
FRFET
®
MOSFET
500 V, 20 A, 260 m
Features
•R
DS(on)
= 210 m (Typ.) @ V
GS
= 10 V, I
D
= 10 A
• Low Gate Charge (Typ. 50 nC)
• Low C
rss
(Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
MOSFET is Fairchild Semiconductor
®
’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET
®
MOSFET has been enhanced by lifetime
control. Its t
rr
is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
D
G
S
TO-220F
S
D
G
S
D
G
TO-220
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol Parameter FDP20N50F FDPF20N50FT Unit
V
DSS
Drain to Source Voltage 500 V
V
GSS
Gate to Source Voltage ±30 V
I
D
D r a i n C u r r e n t
- Continuous (T
C
= 25
o
C) 20 20*
A
- Continuous (T
C
= 100
o
C) 12.9 12.9*
I
DM
D r a i n C u r r e n t - P u l s e d (Note 1) 80 80* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 1110 mJ
I
AR
Avalanche Current (Note 1) 20 A
E
AR
Repetitive Avalanche Energy (Note 1) 25 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 250 38.5 W
- Derate above 25
o
C2.00.3W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDP20N50F FDPF20N50FT Unit
R
JC
Thermal Resistance, Junction to Case, Max. 0.5 3.3
o
C/WR
CS
Thermal Resistance, Case to Sink, Typ. 0.5 -
R
JA
Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
*Drain current limited by maximum junction temperature