Datasheet

FDPF2710T — N-Channel PowerTrench
®
MOSFET
©2007 Fairchild Semiconductor Corporation
FDPF2710T Rev. C3
Thermal Resistance, Junction-to-Ambient, Max.
Thermal Resistance, Junction-to-Case, Max.
FDPF2710T
Consumer Appliances
High Power and Current Handling Capability
High Performance Trench Technology for Extremely Low
R
Low Gate Charge
Fast Switching Speed
1
www.fairchildsemi.com
Absolute Maximum Ratings
Thermal Characteristics
Symbol Parameter Unit
V
DS
Drain-Source Voltage 250 V
V
GS
Gate-Sour
ce volt
age ± 30 V
I
D
Drain Current - Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
25
18.8
A
A
I
DM
Drain Current - Pulsed
(Note 1)
100
A
E
AS
Single Pulsed Avalanche Energy
(Note 2)
145 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
62.5
0.5
W
W/°C
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 °C
Symbol Parameter
R
θJC
2
.0 °
C/
W
R
θJA
62.5 °C/W
FDPF2710T
N-Channel PowerTrench
®
MOSFET
250 V, 25 A, 42.5 mΩ
•RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench
®
process that has
been t
ailored to minimize th
e on-state resistance while maintain-
ing superior switching performance.
Applications
Synchronous Rectification
DS(on)
UnitFDPF2710T
•R
DS(on)
= 36.3 mΩ ( Typ.)@ V
GS
= 10 V, I
D
= 25 A
October 2013
TO-220F
G
D
S
G
S
D
Features

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