Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDPF39N20, MOSFET

November 2013

FDP39N20 / FDPF39N20 — N-Channel UniFET

MOSFET

FDP39N20 / FDPF39N20 Rev. C1

www.fairchildsemi.com

FDP39N20 / FDPF39N20

N-Channel UniFET

MOSFET

200 V, 39 A, 66 mΩ

Features

•R

DS(on)

= 66 mΩ (Max.) @ V

= 10 V, I

= 19.5 A

• Low Gate Charge (Typ. 38 nC)

•Low C

rss

(Typ. 57 pF)

• 100% Avalanche Tested

Applications

•PDP TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

TO-220

TO-220F

Absolute Maximum Ratings T

= 25°C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDP39N20 FDPF39N20 Unit

DSS

Drain-Source Voltage 200 V

Drain Current - Continuous (T

= 25°C)

- Continuous (T

= 100°C)

23.4

39 *

23.4 *

Drain Current - Pulsed

(Note 1)

156 156 * A

GSS

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

(Note 2)

860 mJ

Avalanche Current

(Note 1)

39 A

Repetitive Avalanche Energy

(Note 1)

25.1 mJ

dv/dt Peak Diode Recovery dv/dt

(Note 3)

4.5 V/ns

Power Dissipation (T

= 25°C)

- Derate Above 25°C

251

2.0

0.29

W/°C

STG

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300 °C

Symbol Parameter FDP39N20 FDPF39N20 Unit

θJC

Thermal Resistance, Junction-to-Case, Max. 0.5 3.4

°C/W

θJA

Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5

* Drain current limited by maximum junction temperature.

Summary of content (10 pages)

PAGE 1
FDP39N20 / FDPF39N20 N-Channel UniFETTM MOSFET 200 V, 39 A, 66 mΩ Features Description • RDS(on) = 66 mΩ (Max.) @ VGS = 10 V, ID = 19.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDP39N20 Top Mark FDP39N20 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF39N20 FDPF39N20 TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max Unit 200 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.
PAGE 3
10 2 10 1 10 Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] ID, Drain Current [A] Figure 1. On-Region Characteristics 0 10 2 10 1 o 150 C o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test 2. 250μs Pulse Test o 2. TC = 25 C 10 -1 10 0 10 10 1 0 2 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 19.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 o TJ, Junction Temperature [ C] Figure 9-1.
PAGE 5
FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) D = 0 .5 10 0 .2 -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 θJC ZθJC Thermal Response [oC/W] Z (t),(t), Thermal Response Figure 11-1. Transient Thermal Response Curve - FDP39N20 10 * N o te s : -5 10 -4 10 -3 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 s in g le p u ls e 10 t2 1 . Z θ J C ( t) = 0 .5 -2 3 .
PAGE 6
50KΩ 200nF 12V FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14.
PAGE 7
FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15.
PAGE 8
FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FDP39N20 / FDPF39N20 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.