Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDPF3N50NZ, MOSFET

October 2013

FDPF3N50NZ — N-Channel UniFET

II MOSFET

FDPF3N50NZ Rev. C2

www.fairchildsemi.com

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDPF3N50NZ Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

C) 3*

- Continuous (T

= 100

C) 1.8*

Drain Current - Pulsed (Note 1) 12* A

Single Pulsed Avalanche Energy (Note 2) 113 mJ

Avalanche Current (Note 1) 3 A

Repetitive Avalanche Energy (Note 1) 5.4 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

Power Dissipation

= 25

C) 27 W

- Derate above 25

C0.21W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter

FDPF3N50NZ

Unit

JC

Thermal Resistance, Junction to Case, Max. 4.6

C/W

JA

Thermal Resistance, Junction to Ambient, Max. 62.5

FDPF3N50NZ

N-Channel UniFET

II MOSFET

500 V, 3 A, 2.5 

Features

•R

DS(on)

= 2.1  (Typ.) @ V

= 10 V, I

= 1.5 A

• Low Gate Charge (Typ. 6.2 nC)

• Low C

rss

(Typ. 2.5 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power con-

verter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

• LCD/LED TV • Uninterruptible Power Supply

• Lighting • AC-DC Power Supply

*Drain current limited by maximum junction temperature

TO-220F

Summary of content (9 pages)

PAGE 1
FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS(on) = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Device Marking FDPF3N50NZ Device FDPF3N50NZ Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 ID, Drain Current[A] ID, Drain Current[A] 10 0.1 o 150 C 1 o 25 C *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.03 0.1 2. TC = 25 C 0.1 25 1 10 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o -55 C 3 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 Figure 4.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.6 2.4 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.15 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -75 -50 0 50 100 o TJ, Junction Temperature [ C] 2.0 1.6 1.2 0.8 0.4 -75 -50 150 Figure 9. Maximum Safe Operating Area vs. Case Temperature-FDPF3N50NZ *Notes: 1. VGS = 10V 2. ID = 1.
PAGE 5
FDPF3N50NZ — N-Channel UniFETTM II MOSFET Typical Characteristics (Continued) Figure 12. Transient Thermal Response Curve- FDPF3N50NZ 0.5 o ZJC(t), Thermal Response Thermal Response [ZJC[ ]C/W] 5 1 0.2 0.1 0.05 0.1 0.02 PDM *Notes: 0.01 t1 o t2 Max. 1. ZJC(t) = 4.6 C/W 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.
PAGE 6
FDPF3N50NZ — N-Channel UniFETTM II MOSFET Figure 13. Gate Charge Test Circuit & Waveform IG = const. Figure 14. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FDPF3N50NZ Rev. C2 6 www.fairchildsemi.
PAGE 7
FDPF3N50NZ — N-Channel UniFETTM II MOSFET Figure 16.
PAGE 8
FDPF3N50NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions TO-220F 3L Figure 17. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.