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November 2013

FDPF4N60NZ — N-Channel UniFET

II MOSFET

FDPF4N60NZ Rev. C1

www.fairchildsemi.com

FDPF4N60NZ

N-Channel UniFET

II MOSFET

600 V, 3.8 A, 2.5 Ω

Features

•R

DS(on)

= 1.9 Ω (Typ.) @ V

= 10 V, I

= 1.9 A

• Low Gate Charge (Typ. 8.3 nC)

•Low C

rss

(Typ. 3.7 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

•RoHS Compliant

Applications

• Consumer Appliances

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power con-

verter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

TO-220F

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDPF4N60NZ Unit

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

C) 3.8*

- Continuous (T

= 100

C) 2.3*

Drain Current - Pulsed (Note 1) 15* A

Single Pulsed Avalanche Energy (Note 2) 223.8 mJ

Avalanche Current (Note 1) 3.8 A

Repetitive Avalanche Energy (Note 1) 8.9 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

Power Dissipation

= 25

C) 28 W

- Derate Above 25

C0.22W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDPF4N60NZ

Unit

θJC

Thermal Resistance, Junction to Case, Max. 4.5

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Drain current limited by maximum junction temperature.

Summary of content (9 pages)

PAGE 1
FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDPF4N60NZ Top Mark FDPF4N60NZ Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 VGS = 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 10 10 1 0.1 o 150 C 1 o 25 C o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.02 0.1 1 10 VDS, Drain-Source Voltage[V] 0.1 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 40 IS, Reverse Drain Current [A] 4.0 3.5 3.0 VGS = 10V 2.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDPF4N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] ZθJC(t), Thermal Response [oC/W] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 o Single pulse 0.01 -5 10 ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 t2 *Notes: 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3.
PAGE 6
FDPF4N60NZ — N-Channel UniFETTM II MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDPF4N60NZ Rev. C1 6 www.fairchildsemi.
PAGE 7
FDPF4N60NZ — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16.
PAGE 8
FDPF4N60NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.