Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDPF5N50NZ, MOSFET

December 2013

FDP5N50NZ / FDPF5N50NZ — N-Channel UniFET

II MOSFET

FDP5N50NZ / FDPF5N50NZ Rev. C1

www.fairchildsemi.com

FDP5N50NZ / FDPF5N50NZ

N-

Channel UniFET

II MOSFET

V, 4.5 A, 1.5

Ω

Features

•R

DS(on)

= 1.38 Ω (Typ.) @ V

= 10 V, I

= 2.25 A

•

Low Gate Charge (Typ. 9 nC)

•

Low C

RSS

(Typ. 4 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Improved Capability

•RoHS Compliant

Applications

• LCD/ LED TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power con-

verter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

TO-220

TO-220F

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter

FDP5N50NZ FDPF5N50NZ

Unit

θJC

Thermal Resistance, Junction to Case, Max. 1.6 4.1

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5 62.5

Symbol Parameter FDP5N50NZ FDPF5N50NZ

Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

4.5 4.5*

- Continuous (T

= 100

2.7 2.7*

Drain Current - Pulsed (Note 1) 18 18* A

Single Pulsed Avalanche Energy (Note 2) 160 mJ

Avalanche Current (Note 1) 4.5 A

Repetitive Avalanche Energy (Note 1) 7.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns

Power Dissipation

= 25

C) 78 30 W

- Derate above 25

C 0.62 0.24 W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering ,

1/8” from Case for 5 Seconds.

300

*Drain current limited by maximum junction temperature

Summary of content (10 pages)

PAGE 1
FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features Description • R DS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Part Number Top Mark FDP5N50NZ FDP5N50NZ Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF5N50NZ FDPF5N50NZ TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250s Pulse Test 10 ID, Drain Current[A] ID, Drain Current[A] 10 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 20 Figure 3. On-Resistance Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 2.25A 0.5 0.0 -100 150 Figure 9. Maximum Safe Operating Area for FDP5N50NZ -50 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10.
PAGE 5
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve for FDP5N50NZ ZθJC(t), Thermal Response[C/W] 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 t2 0.02 *Notes: o 0.01 1. ZJC(t) = 1.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.01 -5 10 -4 10 -3 -2 -1 0 1 10 10 10 10 t1, Rectangular Pulse Duration [sec] 10 2 10 Figure 13.
PAGE 6
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) t off tf Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDP5N50NZ / FDPF5N50NZ Rev. C1 6 www.fairchildsemi.
PAGE 7
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17.
PAGE 8
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFETTM II MOSFET Mechanical Dimensions Figure 19. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 10
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.