Datasheet
FDP5N50NZ / FDPF5N50NZ — N-Channel UniFET
TM
II MOSFET
©2010 Fairchild Semiconductor Corporation
FDP5N50NZ / FDPF5N50NZ Rev. C1
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature
vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area
for FDP5N50NZ for FDPF5N50NZ
V
DS
, Drain-Source Voltage [V]
Figure 11. Maximum Drain Current
-100 -50 0 50
o
100 150
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250
A
BV
DSS
, [Normalized]
Drain-Source Breakdown Voltage
T
J
, Junction Temperature
[
C
]
-100 -50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 2.25A
R
DS(on)
, [Normalized]
Drain-Source On-Resistance
T
J
, Junction Temperature
[
o
C
]
1 10 100 1000
0.01
0.1
1
10
30
100s
1ms
10ms
I
D
, Drai
n Current [A]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
1 10 100 1000
0.01
0.1
1
10
30
100us
1ms
10ms
I
D
, Drai
n Current [A]
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
DC
25 50 75 100 125 150
0
1
2
3
4
5
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
vs. Case Temperature