Datasheet
December 2013
FDP7N60NZ / FDPF7N60NZ — N-Channel UniFET
TM
II MOSFET
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C2
www.fairchildsemi.com
1
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFET
TM
II MOSFET
600 V, 6.5 A, 1.25 Ω
Features
•R
DS(on)
= 1.05 Ω (Typ.) @ V
GS
= 10 V, I
D
= 3.25 A
• Low Gate Charge (Typ. 13 nC)
•Low C
rss
(Typ. 7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
•RoHS Compliant
Applications
• LCD/ LED/ PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
MOSFET Maximum Ratings T
C
= 25
o
C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FDP7N60NZ
FDPF7N60NZ /
FDPF7N60NZT
Unit
V
DSS
Drain to Source Voltage 600 V
V
GSS
Gate to Source Voltage ±30 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C) 6.5 6.5*
A
- Continuous (T
C
= 100
o
C) 3.9 3.9*
I
DM
Drain Current - Pulsed (Note 1) 26 26* A
E
AS
Single Pulsed Avalanche Energy (Note 2) 275 mJ
I
AR
Avalanche Current (Note 1) 6.5 A
E
AR
Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 147 33 W
- Derate Above 25
o
C 1.2 0.26 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter FDP7N60NZ
FDPF7N60NZ /
FDPF7N60NZT
Unit
R
θJC
Thermal Resistance, Junction to Case, Max. 0.85 3.8
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient, Max. 62.5 62.5
*Drain current limited by maximum junction temperature.
TO-220
G
D
S
TO-220F
G
D
S
G
D
S