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October 2013

FDPF8N50NZF — N-Channel UniFET

II FRFET

MOSFET

FDPF8N50NZF Rev. C1

www.fairchildsemi.com

FDPF8N50NZF

N-Channel UniFET

II FRFET

MOSFET

500 V, 7 A, 1 

Features

•R

DS(on)

= 850 m (Typ.) @ V

= 10 V, I

= 3.25 A

• Low Gate Charge (Typ. 14 nC)

• Low C

rss

(Typ. 5 pF)

• 100% Avalanche Tested

• Improve dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

Applications

• LCD/LED TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also

provides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. The body diode’s reverse recovery performance of

UniFET II FRFET

MOSFET has been enhanced by lifetime

control. Its t

is less than 100nsec and the reverse dv/dt

immunity is 15V/ns while normal planar MOSFETs have over

200nsec and 4.5V/nsec respectively. Therefore, it can remove

additional component and improve system reliability in certain

applications in which the performance of MOSFET’s body diode

is significant. This device family is suitable for switching power

converter applications such as power factor correction (PFC),

flat panel display (FPD) TV power, ATX and electronic lamp

ballasts.

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDPF8N50NZF Unit

DSS

Drain to Source Voltage 500 V

GSS

Gate to Source Voltage ±25 V

Drain Current

- Continuous (T

= 25

C) 7*

- Continuous (T

= 100

C) 4.2*

Drain Current - Pulsed (Note 1) 28* A

Single Pulsed Avalanche Energy (Note 2) 93 mJ

Avalanche Current (Note 1) 7 A

Repetitive Avalanche Energy (Note 1) 13 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

= 25

C) 40 W

- Derate above 25

C0.32W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol Parameter FDPF8N50NZF Unit

JC

Thermal Resistance, Junction to Case, Max. 3.1

C/W

JA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Drain current limited by maximum junction temperature

TO-220F

Summary of content (8 pages)

PAGE 1
FDPF8N50NZF N-Channel UniFETTM II FRFET® MOSFET 500 V, 7 A, 1  Features Description • RDS(on) = 850 m (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Device Marking FDPF8N50NZF Device FDPF8N50NZF Package TO-220F Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 500 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 30 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID, Drain Current[A] 10 ID, Drain Current[A] Figure 2. Transfer Characteristics 30 1 0.1 o 150 C o -55 C o 25 C 1 *Notes: 1. 250s Pulse Test *Notes: 1. VDS = 20V 2. 250s Pulse Test o 0.03 0.03 2. TC = 25 C 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 8 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDPF8N50NZF 100 s 10 s 1 10 1.1 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 1 ms 10 ms 100 ms 0 10 Operation in This Area is Limited by R DS(on) -1 10 ? Notes : o 1. TC = 25 C 0.9 o 2. TJ = 150 C 3. Single Pulse *Notes: 1. VGS = 0V 2. ID = 250A 0.
PAGE 5
FDPF8N50NZF — N-Channel UniFETTM II FRFET® MOSFET Figure 11. Gate Charge Test Circuit & Waveform IG = const. Figure 12. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms VGS ©2010 Fairchild Semiconductor Corporation FDPF8N50NZF Rev. C1 5 www.fairchildsemi.
PAGE 6
FDPF8N50NZF — N-Channel UniFETTM II FRFET® MOSFET Figure 14.
PAGE 7
FDPF8N50NZF — N-Channel UniFETTM II FRFET® MOSFET Mechanical Dimensions TO-220F 3L Figure 15. TO220, Molded, 3LD, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.