Datasheet

December 2013
FDPF8N50NZU — N-Channel UniFET
TM
II Ultra FRFET
TM
MOSFET
©2010 Fairchild Semiconductor Corporation
FDPF8N50NZU Rev C1
www.fairchildsemi.com
1
FDPF8N50NZU
N-Channel UniFET
TM
II Ultra FRFET
TM
MOSFET
500 V, 6.5 A, 1.2 Ω
Features
R
DS(on)
= 1.0 Ω (Typ.) @ V
GS
= 10 V, I
D
= 3.25 A
Low Gate Charge (Typ. 14 nC)
Low C
rss
(Typ. 5 pF)
100% Avalanche Tested
Improved dv/dt Capability
ESD Improved Capability
Description
UniFET
TM
II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest on-state
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gate-source ESD diode allows UniFET II MOSFET to
withstand over 2kV HBM surge stress. UniFET II Ultra FRFET
TM
MOSFET has much superior body diode reverse recovery
performance. Its t
rr
is less than 50nsec and the reverse dv/dt immunity
is 20V/nsec while normal planar MOSFETs have over 200nsec and
4.5V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET
can remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switching
power converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Applications
Absolute Maximum Ratings T
C
= 25
o
C unless otherwise noted.
TO-220F
G
D
S
G
S
D
•
•
•
•
•
•
RoHS Compliant
•
LCD/LED TV
•
Lighting
•
Uninterruptible Power Supply
•
AC-DC Power Supply
•
Thermal Characteristics
Symbol Parameter
FDPF8N50NZU
Unit
V
DSS
Drain to Source Voltage 500 V
V
GSS
Gate to Source Voltage ±25 V
I
D
Drain Current
- Continuous (T
C
= 25
o
C)
6.5*
A
- Continuous (T
C
= 100
o
C)
3.9*
I
DM
Drain Current - Pulsed
(Note 1)
26* A
E
AS
Single Pulsed Avalanche Energy
(Note 2)
80 mJ
I
AR
Avalanche Current
(Note 1)
6.5 A
E
AR
Repetitive Avalanche Energy
(Note 1)
13 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
20 V/ns
P
D
Power Dissipation
(T
C
= 25
o
C) 40 W
- Derate Above 25
o
C
0.32 W/
o
C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
300
o
C
Symbol Parameter
FDPF8N50NZU
Unit
R
JC
Thermal Resistance, Junction to Case, Max.
3.1
o
C/WR
CS
Thermal Resistance, Case to Sink, Typ.
0.5
R
JA
Thermal Resistance, Junction to Ambient, Max.
62.5
*Drain current limited by maximum junction temperature