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November 2013

FDPF8N60ZUT — N-Channel UniFET

II Ultra FRFET

MOSFET

FDPF8N60ZUT Rev. C2

www.fairchildsemi.com

FDPF8N60ZUT

N-Channel UniFET

II Ultra FRFET

MOSFET

600 V, 6.5 A, 1.35 Ω

Features

•R

DS(on)

= 1.15 Ω (Typ.) @ V

= 10 V, I

= 3.25 A

• Low Gate Charge (Typ. 20 nC)

•Low C

rss

(Typ. 10 pF)

• 100% Avalanche Tested

• Improved dv/dt Capability

•RoHS Compliant

Applications

• LCD/LED TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

UniFET

II MOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. UniFET II Ultra FRFET

MOSFET has much superior

body diode reverse recovery performance. Its t

is less than

50nsec and the reverse dv/dt immunity is 20V/nsec while nor-

mal planar MOSFETs have over 200nsec and 4.5V/nsec

respectively. Therefore UniFET II Ultra FRFET MOSFET can

remove additional component and improve system reliability in

certain applications that require performance improvement of

the MOSFET’s body diode. This device family is suitable for

switching power converter applications such as power factor

correction (PFC), flat panel display (FPD) TV power, ATX and

electronic lamp ballasts.

TO-220F

MOSFET Maximum Ratings T

= 25

C unless otherwise noted.

Thermal Characteristics

Symbol Parameter FDPF8N60ZUT Unit

DSS

Drain to Source Voltage 600 V

GSS

Gate to Source Voltage ±30 V

Drain Current

- Continuous (T

= 25

C) 6.5*

- Continuous (T

= 100

C) 3.9*

Drain Current - Pulsed (Note 1) 26* A

Single Pulsed Avalanche Energy (Note 2) 420 mJ

Avalanche Current (Note 1) 6.5 A

Repetitive Avalanche Energy (Note 1) 13.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns

Power Dissipation

= 25

C) 34.5 W

- Derate Above 25

C0.28W/

, T

STG

Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter

FDPF8N60ZUT

Unit

θJC

Thermal Resistance, Junction to Case, Max. 3.6

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

*Drain current limited by maximum junction temperature

Summary of content (8 pages)

PAGE 1
FDPF8N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 6.5 A, 1.35 Ω Features Description • RDS(on) = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.
PAGE 2
Part Number FDPF8N60ZUT Top Mark FDPF8N60ZUT Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics 20 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V *Notes: 1. VDS = 20V 2. 250μs Pulse Test 10 ID,Drain Current[A] 10 ID,Drain Current[A] Figure 2. Transfer Characteristics 20 1 o 150 C o 25 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 1 10 0.1 20 2 VDS,Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS,Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 50 1.12 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.16 1.08 1.04 1.00 0.96 100μs 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) 0.1 -50 0 50 100 150 o TJ, Junction Temperature [ C] DC *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 0.88 -100 20μs o 0.01 200 2. TJ = 150 C 3.
PAGE 5
FDPF8N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET IG = const. Figure 11. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 12. Resistive Switching Test Circuit & Waveforms VGS Figure 13. Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FDPF8N60ZUT Rev. C2 5 www.fairchildsemi.
PAGE 6
FDPF8N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 14.
PAGE 7
FDPF8N60ZUT — N-Channel UniFETTM II Ultra FRFETTM MOSFET Mechanical Dimensions Figure 15. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 8
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.