Datasheet

©2002 Fairchild Semiconductor Corporation
September 2002
FDS2582 Rev. B
FDS2582
FDS2582
N-Channel PowerTrench
®
MOSFET
150V, 4.1A, 66mΩ
Features
•r
DS(ON)
= 57mΩ (Typ.), V
GS
= 10V, I
D
= 4.1A
•Q
g
(tot) = 19nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82855
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
4.1 A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W) 2.6 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 252 mJ
P
D
Power dissipation 2.5 W
Derate above 25
o
C20mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 80
o
C/W
R
θJC
Thermal Resistance, Junction to Case (Note 2) 25
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS2582 FDS2582 SO-8 330mm 12mm 2500 units
4
3
2
1
5
6
7
8
SO-8
Branding Dash
1
5
2
3
4