Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS2670, MOSFET

August 2001

2001 Fairchild Semiconductor Corporation

FDS2670 Rev C1(W)

FDS2670

200V N-Channel PowerTrench







MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

RDS

(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 3.0 A, 200 V. R

DS(ON)

= 130 mΩ @ V

= 10 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 200 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 3.0 A

– Pulsed 20

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns

, T

STG

Operating and Storage Junction Temperature Range

−55 to +150 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1c) 125

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS2670 FDS2670 13’’ 12mm 2500 units

FDS2670

Summary of content (6 pages)

PAGE 1
FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.0 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V • Low gate charge • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 100 V, ID = 3.0 A 375 mJ 3.
PAGE 3
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. ISD ≤ 3A, di/dt ≤ 100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C FDS2670 Rev C1(W) FDS2670 Notes: 1.
PAGE 4
FDS2670 Typical Characteristics 1.6 20 VGS = 10V 6.5V VGS = 5.5V 15 1.4 6.0V 6.0V 1.2 10 6.5V 10.0V 1 5 5.5V 0.8 0 0 2 4 6 8 0 10 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.5 ID = 3.0A VGS = 10V ID = 1.5 A 2 0.3 1.5 o TA = 125 C 0.2 1 o 0.1 0.
PAGE 5
FDS2670 Typical Characteristics 2000 15 ID = 3.0 A f = 1MHz VGS = 0 V VDS = 40V 70 12 1500 100 V CISS 9 1000 6 500 3 COSS 0 CRSS 0 0 5 10 15 20 25 30 35 0 40 20 Qg, GATE CHARGE (nC) 40 60 Figure 7. Gate Charge Characteristics. 100 Figure 8. Capacitance Characteristics. 100 100 RDS(ON) LIMIT 100µs 10 ID, DRAIN CURRENT (A) 80 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 60 100ms 1 SINGLE PULSE RθJA = 125°C/W TA = 25°C 80 1s 10s 40 DC 0.
PAGE 6
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