Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS2672, MOSFET

FDS2672 N-Channel UltraFET Trench

MOSFET

FDS2672 Rev. B

www.fairchildsemi.com1

August 2006

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 200 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 3.9

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 37.5 mJ

Power Dissipation (Note 1a) 2.5

Power Dissipation (Note 1b) 1.0

, T

STG

Operating and Storage Temperature -55 to 150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/WR

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 125

Device Marking Device Reel Size Tape Width Quantity

FDS2672 FDS2672 13’’ 12mm 2500 units

FDS2672

N-Channel UltraFET Trench

MOSFET

200V, 3.9A, 70mΩ

Features

 Max r

DS(on)

= 70mΩ at V

= 10V, I

= 3.9A

 Max r

DS(on)

= 80mΩ at V

= 6V, I

= 3.5A

 Fast switching speed

 High performance trench technology for extremely low

DS(on)

 RoHS compliant

General Description

This single N-Channel MOSFET is produced using

Fairchild Semiconductor’s advanced UItraFET Trench

process that has been especially tailored to minimize

the on-state resistance and yet maintain superior switching

performance.

Application

 DC-DC conversion

Pin 1

SO-8

Summary of content (6 pages)

PAGE 1
FDS2672 N-Channel UltraFET Trench® MOSFET tm 200V, 3.9A, 70mΩ Features General Description Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 200 ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current V mV/°C 206 VDS = 160V, VGS=0V 1 µA VDS = 160V, VGS=0V TJ = 55°C 10 µA ±100 nA 4 V VGS = ±20V On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA
PAGE 3
PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 50 VGS = 10V 40 VGS = 6V 30 VGS = 5V 20 VGS = 4.5V 10 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 5V VGS = 6V 1.5 1.0 0.5 VGS = 10V 0 5 10 15 20 25 30 35 40 45 50 ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 180 2.8 ID = 3.9A VGS = 10V 2.2 1.6 1.0 0.
PAGE 4
VDD = 50V 8 VDD = 100V 6 VDD = 150V 4 2 0 0 8 16 24 Qg, GATE CHARGE(nC) 32 1000 Coss 10 0.1 TJ = 25oC 1 TJ = 125oC 3.5 3.0 VGS = 10V 2.5 2.0 VGS = 6V 1.5 1.0 0.5 0.1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0.0 25 1000 0 1ms LIMITED BY PACKAGE -1 10 -3 10 P(PK), PEAK TRANSIENT POWER (W) 100us 10 0.01 0.1 10ms 100ms 1s SINGLE PULSE TJ = MAX RATED TA = 25OC OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 10 DC 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 1E-3 1E-4 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13.
PAGE 6
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