Datasheet

tm
August 2006
FDS2734 Single N-Channel UItraFET Trench
®
MOSFET
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
www.fairchildsemi.com1
Pin 1
SO-8
FDS2734
N-Channel UItraFET Trench
®
MOSFET
250V, 3.0A, 117mΩ
Features
 Max r
DS(on)
=117mΩ at V
GS
=10V, I
D
= 3.0A
 Max r
DS(on)
=126mΩ at V
GS
= 6V, I
D
= 2.8A
 Fast switching speed
 High performance trench technology for extremely
low r
DS(on)
 High power and current handling capability
 RoHS compliant
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
 DC-DC conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 250 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Note 1a) 3.0
A
-Pulsed 50
E
AS
Single Pulse Avalanche Energy (Note 3) 12.5 mJ
P
D
Power dissipation (Note 1a) 2.5
W
Power dissipation (Note 1b) 1.0
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
o
C
R
θJA
Thermal Resistance, Junction- to -Ambient (Note 1a) 50
o
C/WR
θJA
Thermal Resistance, Junction- to- Ambient (Note 1b) 125
R
θJC
Thermal Resistance, Junction -to- Case (Note 1) 25
Device Marking Device Package Reel Size Tape Width Quantity
FDS2734 FDS2734 SO-8 13’’ 12mm 2500 units
4
3
2
1
5
6
7
8
D
D
D
D
G
S
S
S