Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS3512, MOSFET

May 2001

 2001 Fairchild Semiconductor Corporation

FDS3512 Rev B1 (W)

FDS3512

80V N-Channel PowerTrench

MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 4.0 A, 80 V R

DS(ON)

= 70 mΩ @ V

= 10 V

DS(ON)

= 80 mΩ @ V

= 6 V

• Low gate charge (13nC Typical)

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 80 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 4.0 A

– Pulsed 30

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +175

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3512 FDS3512 13’’ 12mm 2500 units

FDS3512

Summary of content (5 pages)

PAGE 1
FDS3512 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.0 A, 80 V • Low gate charge (13nC Typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 40 V, ID = 4.0 A 90 mJ 4.
PAGE 3
FDS3512 Typical Characteristics 1.8 20 VGS = 10V 4.5V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V 15 4.0V 10 5 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 0.8 0 0 1 2 3 4 0 5 5 Figure 1. On-Region Characteristics. 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.18 2.5 ID = 4A VGS = 10V 2.
PAGE 4
FDS3512 Typical Characteristics 1000 VDS = 20V ID = 4A f = 1MHz VGS = 0 V 40V 8 800 60V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 600 400 200 COSS CRSS 0 0 0 3 6 9 12 15 0 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 80 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 60 Figure 8. Capacitance Characteristics. 100 100µs 10 1ms 10ms 100ms 1s 10s DC 1 VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.
PAGE 5
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