Datasheet

©2003 Fairchild Semiconductor Corporation
November 2003
FDS3572 Rev. A
FDS3572
FDS3572
N-Channel PowerTrench
®
MOSFET
80V, 8.9A, 16mΩ
Features
•r
DS(ON)
= 14mΩ (Typ.), V
GS
= 10V, I
D
= 8.9A
•Q
g(tot)
= 31nC (Typ.), V
GS
= 10V
• Low Miller Charge
•Low Q
RR
Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82663
Applications
• Primary switch for Isolated DC/DC converters
• Distributed Power and Intermediate Bus Architectures
• High Voltage Synchronous Rectifier for DC Bus
Converters
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 80 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current
8.9 A
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Continuous (T
A
= 100
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W) 5.6 A
Pulsed Figure 4 A
E
AS
Single Pulse Avalanche Energy (Note 1) 515 mJ
P
D
Power dissipation 2.5 W
Derate above 25
o
C20mW/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to 150
o
C
R
θJC
Thermal Resistance, Junction to Case (Note 2) 25
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85
o
C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS3572 FDS3572 SO-8 330mm 12mm 2500 units
SO-8
Branding Dash
1
5
2
3
4
4
3
2
1
5
6
7
8