Datasheet
FDS3580
FDS3580 Rev. C
Typical Characteristics (continued)
0.001 0.01 0.1 1 10 100 300
0
10
20
30
40
50
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
R =125°C/W
T = 25°C
θ
JA
A
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
0.0001 0.001 0.01 0.1 1 10 100 300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TI ME (s e c)
TR ANSI ENT TH ER MAL RESISTANC E
r(t), NORMALIZED EFFECTIVE
1
S i n g l e P u l s e
D = 0.5
0. 1
0.05
0.02
0. 0 1
0.2
D u t y C y c l e, D = t /t
1
2
R (t) = r(t) * R
R = 125°C/ W
θ
JA
θ
JA
θ
JA
T - T = P * R (t)
θ
JA
A
J
P(pk )
t
1
t
2
0
2
4
6
8
10
0 5 10 15 20 25 30 35
Q
g
, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 7.6A
V
DS
= 10V
20V
40V
0
400
800
1200
1600
2000
2400
0 1020304050607080
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF
)
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
0.01
0.1
1
10
100
0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A
)
DC
10s
1s
100ms
10ms
1ms
100
µ
s
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.