Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS3590, MOSFET

November 2000

 2000 Fairchild Semiconductor Corporation

FDS3590 Rev C (W)

FDS3590

80V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

Features

• 6.5 A, 80 V R

DS(ON)

= 39 mΩ @ V

= 10 V

DS(ON)

= 44 mΩ @ V

= 6 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 80 V

GSS

Gate-Source Voltage

±20

Drain Current – Continuous (Note 1a) 6.5 A

– Pulsed 50

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature

Range

-55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS3590 FDS3590 13’’ 12mm 2500 units

FDS3590

Summary of content (6 pages)

PAGE 1
FDS3590 80V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V • Low gate charge These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 40 V, ID = 6.5 A 175 mJ 6.
PAGE 3
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS3590 Rev C.
PAGE 4
FDS3590 Typical Characteristics 2 ID, DRAIN CURRENT (A) VGS = 10V 5.0V 6.0V 40 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 4.5V 30 4.0V 20 10 3.5V 1.8 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 10V 1 0.8 0 0 2 4 6 0 8 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.1 2.2 ID = 3.5 A ID = 6.5A VGS = 10V 1.
PAGE 5
FDS3590 Typical Characteristics 2000 ID = 6.5A VDS = 10V 8 f = 1MHz VGS = 0 V 20V 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 1500 CISS 1000 500 2 COSS CRSS 0 0 0 6 12 18 24 30 0 20 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 80 30 RDS(ON) LIMIT 100µs Ppk, Maximum Peak Power (W) ID, DRAIN CURRENT (A) 60 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.
PAGE 6
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