Datasheet

February 2001
2001 Fairchild Semiconductor Corporation
FDS3890 Rev B(W)
FDS3890
80V N-Channel Dual PowerTrench



MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON)
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
4.7 A, 80 V. R
DS(ON)
= 44 mΩ @ V
GS
= 10 V
R
DS(ON)
= 50 mΩ @ V
GS
= 6 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
S2
SO-8
G2
S1
G1
D2
D2
D1
D1
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 80 V
V
GSS
Gate-Source Voltage
± 20
V
I
D
Drain Current – Continuous (Note 1a) 4.7 A
– Pulsed 20
P
D
Power Dissipation for Dual Operation 2
W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
1.0
(Note 1c)
0.9
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 78
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 40
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3890 FDS3890 13’’ 12mm 2500 units
FDS3890