Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4141, MOSFET

November 2007

FDS4141 Rev.C

www.fairchildsemi.com

FDS4141 P-Channel PowerTrench

MOSFET

FDS4141

P-Channel PowerTrench

MOSFET

-40V, -10.8A, 13.0mΩ

Features

 Max r

DS(on)

= 13.0mΩ at V

= -10V, I

= -10.5A

 Max r

DS(on)

= 19.0mΩ at V

= -4.5V, I

= -8.4A

 High performance trench technology for extremely low r

DS(on)

 RoHS Compliant

General Description

This P-Channel MOSFET has been produced using Fairchild

Semiconductor’s proprietary PowerTrench

technology to

deliver low

DS(on)

and optimized BV

DSS

capability to offer

superior performance benefit in the applications

and optimized

switching performance capability reducing power dissipation

losses in converter/inverter applications

Applications

 Control switch in synchronous & non-synchronous buck

 Load switch

 Inverter

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous -10.8

-Pulsed -36

Single Pulse Avalanche Energy (Note 3) 294 mJ

Power Dissipation T

= 25°C (Note 1a) 5

Power Dissipation T

= 25°C (Note 1b) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Note 1) 25

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS4141 FDS4141 SO-8 13’’ 12mm 2500units

SO-8

Pin 1

Summary of content (6 pages)

PAGE 1
FDS4141 P-Channel PowerTrench® MOSFET -40V, -10.8A, 13.0mΩ Features General Description Max rDS(on) = 13.0mΩ at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Max rDS(on) = 19.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient -40 ID = -250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -32V, IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V V -33 mV/°C -1 µA ±100 nA -3.
PAGE 3
4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 36 -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = -4V 27 VGS = - 4.5V VGS = -10V 18 VGS = -3V 9 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 3.5 VGS = -3V 3.0 2.5 VGS = -3.5V 2.0 VGS = -4V 1.5 VGS = - 4.5V 1.0 VGS = -10V 0.5 0 9 Figure 1. On-Region Characteristics 1.6 ID = -10.5A rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.
PAGE 4
5000 ID = -10.5A Ciss 8 VDD = -20V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = -15V VDD = -25V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 100 60 0.1 0 0 5 10 15 20 25 30 35 40 1 12 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT(A) 40 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 10 TJ = 25oC TJ = 125oC 9 VGS = -10V 6 VGS = -4.5V 3 o RθJA = 50 C/W 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.001 o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDS4141 Rev.C 5 www.fairchildsemi.
PAGE 6
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