Datasheet

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FDS4435BZ Rev.C

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FDS4435BZ P-Channel PowerTrench

MOSFET

FDS4435BZ

P-Channel PowerTrench

MOSFET

-30V, -8.8A, 20m:

Features

 Max r

DS(on)

= 20m: at V

= -10V, I

= -8.8A

 Max r

DS(on)

= 35m: at V

= -4.5V, I

= -6.7A

 Extended V

GSS

range (-25V) for battery applications

 HBM ESD protection level of ±3.8KV typical (note 3)

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability

 Termination is Lead-free and RoHS compliant

General Description

This P-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench

process that has

been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load

switching applications common in Notebook Computers and

Portable Battery Packs.

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous T

= 25°C (Note 1a) -8.8

-Pulsed -50

Power Dissipation T

= 25°C (Note 1a) 2.5

Power Dissipation T

= 25°C (Note 1b) 1.0

Single Pulse Avalanche Energy (Note 4) 24 mJ

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 25

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units

Pin 1

SO-8

April 2009

Summary of content (6 pages)

PAGE 1
FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the on-state resistance. HBM ESD protection level of ±3.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient -30 V ID = -250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V 1 PA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 PA -3 V mV/°C -21 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250PA 'VGS(th) 'TJ Gate to So
PAGE 3
4.0 50 40 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V VGS = -5V VGS = -4.5V 30 VGS = -4V 20 VGS = -3.5V 10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 0 0 1 2 3 3.0 VGS = -4.5V 2.5 VGS = -4V 1.5 VGS = -10V 1.0 0.5 0 4 10 20 30 40 50 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 60 ID = -8.8A VGS = -10V 1.2 1.0 0.8 0.
PAGE 4
-VGS, GATE TO SOURCE VOLTAGE(V) 10 4000 ID = -8.8A Ciss 8 CAPACITANCE (pF) VDD = -10V 6 VDD = -15V VDD = -20V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 0 0 5 10 15 20 25 100 0.1 30 1 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage -4 10 -Ig, GATE LEAKAGE CURRENT(A) -IAS, AVALANCHE CURRENT(A) 20 10 TJ = 25oC TJ = 125oC VDS = 0V -5 10 TJ = 125oC -6 10 -7 10 TJ = 25oC -8 10 -9 1 0.01 0.
PAGE 5
P(PK), PEAK TRANSIENT POWER (W) 1000 VGS = -10 V SINGLE PULSE o RTJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 -2 10 -1 10 10 1 10 100 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.