Datasheet

2012 Fairchild Semiconductor Corporation
FDS4465 Rev C2 (W)
FDS4465
P-Channel 1.8V Specified PowerTrench



MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (1.8V – 8V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –13.5 A, –20 V. R
DS(ON)
= 8.5 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 10.5 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 14 mΩ @ V
GS
= –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High current and power handling capability
S
D
S
S
SO-8
D
D
D
G
D
D
D
D
S
S
S
G
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous
(Note 1a)
–13.5 A
– Pulsed –50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.5
P
D
(Note 1c)
1.2
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +175
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 50
°C/W
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1c) 125
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4465 FDS4465 13’’ 12mm 2500 units
FDS4465
December 20
12