Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4480, MOSFET

2002 Fairchild Semiconductor Corporation

FDS4480 Rev D1 (W)

FDS4480

40V N-Channel PowerTrench



MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

DS(ON)

and fast switching speed.

Applications

• DC/DC converter

Features

• 10.8 A, 40 V. R

DS(ON)

= 12 mΩ @ V

= 10 V

• Low gate charge (29 nC)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 40 V

GSS

Gate-Source Voltage +30/–20 V

Drain Current – Continuous (Note 1a) 10.8 A

– Pulsed 45

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.4

(Note 1c)

1.2

, T

STG

Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W

θJA

Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4480 FDS4480 13’’ 12mm 2500 units

FDS4480

May 2013

Summary of content (6 pages)

PAGE 1
FDS4480 May 2013 FDS4480 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. • 10.8 A, 40 V.
PAGE 2
Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) EAS Drain-Source Avalanche Energy IAS Drain-Source Avalanche Current Single Pulse, VDD=40V, ID=10.8A 240 mJ 10.
PAGE 3
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS 0.7 trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS Qrr Diode Reverse Recovery Charge 58 nC VSD 2.1 A 1.2 V Notes: 1.
PAGE 4
FDS4480 Typical Characteristics 80 VGS = 10V 2 6.0V 5.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 70 60 50 5.0V 40 30 4.5V 20 10 0 0 1 2 3 VGS = 5.0V 1.8 1.6 5.5V 1.4 6.0V 1.2 7.0V 0 20 40 60 80 I D, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.025 ID = 5.4A ID = 10.8A VGS = 10V 1.
PAGE 5
FDS4480 Typical Characteristics 2400 VGS, GATE-SOURCE VOLTAGE (V) 10 ID = 10.8A V D D = 15 V f = 1 MHz VGS = 0 V 2000 8 CAPACITANCE (pF) V D D = 20 V 6 V D D = 25 V 4 2 CISS 1600 1200 800 COSS 400 CRSS 0 0 0 8 16 32 24 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 40 50 1ms 10ms RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100µs 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.
PAGE 6
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