Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4488, MOSFET

2001 Fairchild Semiconductor Corporation FDS4488 Rev C (W)

FDS4488

30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that

has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance. These devices are well suited for low

voltage and battery powered applications where low in-

line power loss and fast switching are required.

Applications

• DC/DC converter

• Load switch

• Motor drives

Features

• 7.9 A, 30 V. R

DS(ON)

= 22 mΩ @ V

= 10 V

DS(ON)

= 30 mΩ @ V

= 4.5 V

• Low gate charge (9.5 nC typical)

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

SO-8

Pin 1

SO-8

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage 30 V

GSS

Gate-Source Voltage ±25 V

Drain Current – Continuous (Note 1a) 7.9 A

– Pulsed 40

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)

1.2

(Note 1c)

1.0

, T

STG

Operating and Storage Junction Temperature Range –55 to +175 °C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4488 FDS4488 13’’ 12mm 2500 units

FDS4488

April 2013

Summary of content (5 pages)

PAGE 1
FDS4488 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low inline power loss and fast switching are required. • 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C V DS = 24 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 25 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –25 V, V DS = 0 V –100 nA 1.
PAGE 3
FDS4488 Typical Characteristics 40 2.6 6.0V 4.5V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) V GS = 10V 4.0V 30 20 3.5V 10 3.0V 0 2.4 V GS=3.5V 2.2 2 1.8 4.0V 1.6 4.5V 1.4 5.0V 6.0V 1.2 10V 1 0.8 0 0.5 1 1.5 2 2.5 3 0 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 0.08 ID = 7.9A V GS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 Figure 2.
PAGE 4
FDS4488 Typical Characteristics 1600 10 V DS =10V V GS, GATE-SOURCE VOLTAGE (V) ID = 7.9A f = 1MHz V GS = 0 V 15V 8 1200 CAPACITANCE (pF) 20V 6 4 CISS 800 COSS 400 2 CRSS 0 0 0 4 8 12 16 20 0 5 Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics.
PAGE 5
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.