Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDS4501H, MOSFET

May 2001

2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W)

FDS4501H

Complementary PowerTrench



Half-Bridge MOSFET

General Description

This complementary MOSFET half-bridge device is

produced using Fairchild’s advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate

charge for superior switching performance.

Applications

• DC/DC converter

• Power management

• Load switch

• Battery protection

Features

• Q1: N-Channel

9.3A, 30V R

DS(on)

= 18 mΩ @ V

= 10V

DS(on)

= 23 mΩ @ V

= 4.5V

• Q2: P-Channel

–5.6A, –20V R

DS(on)

= 46 mΩ @ V

= –4.5V

DS(on)

= 63 mΩ @ V

= –2.5V

SO-8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Q1 Q2 Units

DSS

Drain-Source Voltage 30 –20 V

GSS

Gate-Source Voltage

±20 ±8

Drain Current - Continuous (Note 1a) 9.3 –5.6 A

- Pulsed 20 –20

Power Dissipation for Single Operation (Note 1a) 2.5 W

(Note 1b)

1.2

(Note 1c)

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 50

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4501H FDS4501H 13” 12mm 2500 units

FDS4501H

Summary of content (8 pages)

PAGE 1
FDS4501H Complementary PowerTrench Half-Bridge MOSFET General Description Features This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V • Applications Q2: P-Channel –5.6A, –20V • DC/DC converter RDS(on) = 46 mΩ @ V GS = –4.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics V GS = 0 V, ID = 250 µA V GS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C V DS = 24 V, V GS = 0 V V DS = –16 V, V GS = 0 V V GS = +20 V, V DS = 0 V V GS = +8 V, V DS = 0 V Q1 Q2 Q1 Q
PAGE 3
Electrical Characteristics Symbol Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd (continued) TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Gate-Drain Charge Q1 V DD = 15 V, ID = 1 A, V GS = 10V, RGEN = 6 Ω Q1 V DD = –10 V, ID = –1 A, V GS = –4.5V, RGEN = 6 Ω Q1 V DS = 15 V, ID = 9.3 A, V GS = 4.
PAGE 4
FDS4501H Typical Characteristics: Q2 4 15 V GS = -4.5V -2.5V -3.0V 12 3.5 V GS = -1.5V -2.0V 3 9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5 3 -1.5V -2.5V -3.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID , DRAIN CURRENT (A) -V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 ID = -1.2 A ID = -2.4A 1.4 V GS = -4.5V 0.12 1.3 0.1 1.2 1.1 0.08 T A = 125o C 1 0.06 0.
PAGE 5
FDS4501H Typical Characteristics: Q2 5 2000 f = 1MHz V GS = 0 V V DS = -5V ID = -2.4A -10V 4 1600 CISS -15V 3 1200 2 800 1 400 0 COSS CRSS 0 0 2 4 6 8 10 12 14 0 5 Q g, GATE CHARGE (nC) 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 RDS(ON) LIMIT 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE Rθ JA = 125°C/W T A = 25°C 1ms 10 15 10ms 100ms 1s 1 10 10s DC VGS =-4.5V SINGLE PULSE 0.
PAGE 6
FDS4501H Typical Characteristics: Q1 21 4 V GS = 10.0V 18 3.5V 6.0V 3.5 3.0V 4.5V 15 V GS = 2.5V 3 12 2.5 9 2 6 2.5V 3.0V 1.5 3.5V 4.5V 3 6.0V 1 0 0 0.5 1 1.5 2 10V 0.5 0 5 V DS, DRAIN TO SOURCE VOLTAGE (V) 10 15 20 25 ID, DIRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.08 ID = 9.3A V GS = 10V ID = 4.7A 1.4 0.06 1.2 0.04 T A = 125o C 1 0.02 0.8 TA = 25 oC 0.
PAGE 7
FDS4501H Typical Characteristics Q1 3000 10 ID = 9.3A V DS = 5V 10 8 f = 1 MHz V GS = 0 V 2500 15V CISS 2000 6 1500 4 1000 COSS 2 500 CRSS 0 0 0 5 10 15 20 25 30 0 5 Q g, GATE CHARGE (nC) 10 15 20 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 30 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 1 10s DC V GS = 10V SINGLE PULSE 0.1 o Rθ JA = 125 C/W T A = 25o C 0.
PAGE 8
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